1 $Which of the following conditions is necessary for Ohm’s Law to be valid?$

A.

Temperature must vary linearly

B.

Temperature and physical dimensions must remain constant

C.

Voltage must be inversely proportional to current

D.

The circuit must contain active elements only

2 $Mathematically, Ohm's law is expressed as:$

A.

B.

C.

D.

3 $Ohm’s law is not applicable to which of the following?$

A.

Copper wire

B.

Aluminum resistor

C.

Semiconductor diode

D.

Filament lamp at constant temperature

4 $If the voltage across a resistor is doubled while the resistance remains constant, the current will:$

A.

Remain the same

B.

Be halved

C.

Double

D.

Quadruple

5 $Kirchhoff’s Current Law (KCL) is based on the principle of conservation of:$

A.

Energy

B.

Charge

C.

Momentum

D.

Voltage

6 $According to Kirchhoff’s Voltage Law (KVL), the algebraic sum of voltage drops and EMFs in a closed loop is:$

A.

Equal to the current

B.

Equal to the resistance

C.

Zero

D.

Infinite

7 $Kirchhoff’s Voltage Law (KVL) deals with the conservation of:$

A.

Charge

B.

Energy

C.

Current

D.

Power

8 $In a node where 3 currents enter () and 2 currents leave (), the KCL equation is:$

A.

B.

C.

D.

9 $Two resistors and are connected in series across a voltage source . The voltage across is given by:$

A.

B.

C.

D.

10 $The current division rule is applicable to circuits consisting of resistors connected in:$

A.

Series

B.

Parallel

C.

Star

D.

Delta

11 $Two resistors and are connected in parallel with a total current entering the combination. The current through is:$

A.

B.

C.

D.

12 $Which of the following materials is a semiconductor?$

A.

Copper

B.

Silicon

C.

Plastic

D.

Gold

13 $At absolute zero temperature (), an intrinsic semiconductor acts as:$

A.

A perfect conductor

B.

A perfect insulator

C.

A superconductor

D.

A semiconductor

14 $The energy band gap () for Silicon at room temperature is approximately:$

A.

B.

C.

D.

15 $In an intrinsic semiconductor, the number of free electrons () and holes () are related as:$

A.

B.

C.

D.

16 $Doping is the process of:$

A.

Heating the semiconductor

B.

Purifying the semiconductor

C.

Adding impurities to increase conductivity

D.

Removing impurities

17 $To obtain an N-type semiconductor, which type of impurity is added to Silicon?$

A.

Trivalent

B.

Pentavalent

C.

Tetravalent

D.

Monovalent

18 $The majority charge carriers in a P-type semiconductor are:$

A.

Free electrons

B.

Holes

C.

Ions

D.

Neutrons

19 $Which of the following is an example of a trivalent impurity?$

A.

Phosphorus

B.

Arsenic

C.

Antimony

D.

Boron

20 $In an N-type semiconductor, the position of the Fermi level is:$

A.

At the center of the forbidden gap

B.

Near the valence band

C.

Near the conduction band

D.

Inside the valence band

21 $A PN junction is formed by:$

A.

Connecting a P-type wire to an N-type wire physically

B.

Soldering P-type and N-type blocks

C.

Doping a single crystal with acceptor and donor impurities on two sides

D.

Placing P-type and N-type materials in a vacuum

22 $The depletion region in a PN junction contains:$

A.

Mobile electrons only

B.

Mobile holes only

C.

Immobile positive and negative ions

D.

Neutral atoms

23 $The typical knee voltage (cut-in voltage) for a Silicon PN junction diode is:$

A.

B.

C.

D.

24 $Under forward bias conditions, the width of the depletion layer:$

A.

Increases

B.

Decreases

C.

Remains constant

D.

Becomes infinite

25 $In Reverse Bias, the P-type side of the diode is connected to the:$

A.

Positive terminal of supply

B.

Negative terminal of supply

C.

Ground

D.

Open circuit

26 $The small current that flows in a reverse-biased diode is called:$

A.

Forward current

B.

Reverse saturation current ()

C.

Eddy current

D.

Displacement current

27 $Zener breakdown occurs primarily due to:$

A.

High temperature

B.

Collision of accelerated carriers

C.

High electric field breaking covalent bonds

D.

Low doping concentration

28 $Avalanche breakdown occurs in:$

A.

Lightly doped diodes at high reverse voltage

B.

Heavily doped diodes at low reverse voltage

C.

Forward biased diodes

D.

Intrinsic semiconductors only

29 $A rectifier is a circuit that converts:$

A.

DC to AC

B.

AC to DC

C.

High voltage to Low voltage

D.

Current to Voltage

30 $The maximum efficiency of a Half Wave Rectifier is:$

A.

B.

C.

D.

31 $In a Full Wave Bridge Rectifier, how many diodes are used?$

A.

1

B.

2

C.

4

D.

6

32 $The Peak Inverse Voltage (PIV) rating required for a diode in a Center-Tapped Full Wave Rectifier is:$

A.

B.

C.

D.

33 $Ripple factor is defined as the ratio of:$

A.

DC component to AC component

B.

RMS value of AC component to DC component

C.

Peak voltage to RMS voltage

D.

Input power to Output power

34 $An ideal diode acts as a switch. When forward biased, it acts as a:$

A.

Open switch

B.

Closed switch (Short circuit)

C.

Resistor

D.

Capacitor

35 $What is the primary function of a capacitor filter in a rectifier circuit?$

A.

To increase the voltage amplitude

B.

To convert DC to AC

C.

To remove AC ripples and smooth the output

D.

To protect the diode

36 $BJT stands for:$

A.

Bi-junction Transfer

B.

Bipolar Junction Transistor

C.

Basic Junction Transistor

D.

Binary Junction Transistor

37 $The three terminals of a BJT are called:$

A.

Anode, Cathode, Gate

B.

Source, Gate, Drain

C.

Emitter, Base, Collector

D.

Input, Output, Ground

38 $Which terminal of the BJT is the most heavily doped?$

A.

Base

B.

Collector

C.

Emitter

D.

All are equally doped

39 $Which terminal of the BJT is physically the largest?$

A.

Base

B.

Collector

C.

Emitter

D.

None

40 $The fundamental current equation for a BJT is:$

A.

B.

C.

D.

41 $For a BJT to operate in the Active Region (for amplification):$

A.

Emitter-Base junction is Forward Biased, Collector-Base is Forward Biased

B.

Emitter-Base junction is Reverse Biased, Collector-Base is Forward Biased

C.

Emitter-Base junction is Forward Biased, Collector-Base is Reverse Biased

D.

Both junctions are Reverse Biased

42 $If both junctions of a BJT are Forward Biased, the transistor operates in:$

A.

Active Region

B.

Cut-off Region

C.

Saturation Region

D.

Breakdown Region

43 $In Common Emitter (CE) configuration, the input is applied between:$

A.

Base and Collector

B.

Emitter and Collector

C.

Base and Emitter

D.

Emitter and Ground

44 $The Current Gain in Common Emitter configuration is denoted by:$

A.

(alpha)

B.

(beta)

C.

(gamma)

D.

(delta)

45 $The relationship between and is given by:$

A.

B.

C.

D.

46 $In a Common Emitter amplifier, the phase shift between input and output voltage is:$

A.

B.

C.

D.

47 $The 'Cut-off' region in the BJT output characteristics corresponds to:$

A.

B.

C.

is maximum

D.

Both junctions Forward Biased

48 $Which configuration provides the highest power gain?$

A.

Common Base (CB)

B.

Common Collector (CC)

C.

Common Emitter (CE)

D.

All are equal

49 $The Common Collector configuration is also known as:$

A.

Voltage Follower

B.

Current Mirror

C.

Rectifier

D.

Oscillator

50 $In the construction of a BJT, the Base region is:$

A.

Thick and heavily doped

B.

Thin and lightly doped

C.

Thick and lightly doped

D.

Thin and heavily doped

Unit 1 - Practice Quiz