Unit 5: Solid State Physics - Practice Quiz

PHY110 — Engineering Physics 50 Questions
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1 In the classical free electron theory, the valence electrons in a metal are treated as:

A. Particles moving in a periodic potential
B. A gas of free molecules moving randomly
C. Quantum mechanical wave packets
D. Fixed particles attached to nuclei

2 What is the primary failure of the classical free electron theory (Drude-Lorentz theory)?

A. It failed to explain thermal conductivity
B. It predicted incorrect values for specific heat and heat capacity of metals
C. It could not explain electrical conductivity
D. It could not explain Ohm's Law

3 The Fermi energy () is defined as:

A. The average energy of electrons at room temperature
B. The energy of the lowest occupied level at 0 K
C. The energy of the highest occupied quantum state at 0 K
D. The minimum energy possessed by an electron at 0 K

4 According to the Fermi-Dirac distribution function, what is the probability of occupation of an energy state at any temperature ?

A. 0
B. 1
C. Undefined
D. 0.5

5 Which of the following expressions represents the Fermi-Dirac distribution function?

A.
B.
C.
D.

6 Drift current in a semiconductor is caused by:

A. Application of an external electric field
B. Magnetic field application
C. Concentration gradient of charge carriers
D. Temperature gradient

7 Diffusion current in a semiconductor flows from:

A. Higher potential to lower potential
B. Higher concentration to lower concentration
C. Lower concentration to higher concentration
D. Lower potential to higher potential

8 The relation between the diffusion coefficient () and mobility () is given by the Einstein relation:

A.
B.
C.
D.

9 In the band theory of solids, the formation of energy bands is primarily due to:

A. Electron-electron repulsion
B. Pauli exclusion principle and interaction of atoms in a crystal lattice
C. High temperature effects
D. External magnetic fields

10 The energy gap () represents:

A. The energy difference between the bottom of the conduction band and the top of the valence band
B. The energy difference between the top of the conduction band and bottom of the valence band
C. The width of the conduction band
D. The ionization energy of the atom

11 Which of the following characterizes an insulator?

A. Overlapping valence and conduction bands
B. Zero forbidden energy gap
C. Partially filled conduction band
D. Large forbidden energy gap ( eV)

12 The effective mass () of an electron in a solid is related to the curvature of the curve by:

A.
B.
C.
D.

13 If the curvature of the band () is negative near the top of the valence band, the effective mass is:

A. Negative
B. Positive
C. Infinite
D. Zero

14 A 'hole' in solid state physics is best described as:

A. A vacancy created by a missing electron in the valence band
B. An electron in the conduction band
C. A proton moving in the lattice
D. A positron

15 The Hall Effect is observed when a current-carrying conductor is placed in:

A. A vacuum chamber
B. A transverse magnetic field
C. A transverse electric field
D. A parallel magnetic field

16 The Hall Coefficient () is defined mathematically as:

A.
B.
C.
D.

17 For an n-type semiconductor, the Hall coefficient is:

A. Positive
B. Negative
C. Zero
D. Undefined

18 The formula for Hall coefficient in terms of carrier concentration is:

A.
B.
C.
D.

19 Which of the following parameters cannot be determined directly using the Hall Effect?

A. Mobility of charge carriers
B. Carrier concentration
C. Band gap energy
D. Type of semiconductor (n-type or p-type)

20 In the derivation of the Hall voltage , the Hall field exerts a force that balances the:

A. Gravitational force
B. Nuclear force
C. Lorentz magnetic force
D. Friction force

21 If the Hall voltage is , width of the specimen is , and thickness is , the Hall field is:

A.
B.
C.
D.

22 An intrinsic semiconductor at 0 K behaves as:

A. A semiconductor with low conductivity
B. A perfect conductor
C. A superconductor
D. A perfect insulator

23 The Fermi level in an intrinsic semiconductor at absolute zero is located:

A. Near the Conduction Band
B. Inside the Conduction Band
C. Exactly in the middle of the forbidden energy gap
D. Inside the Valence Band

24 When a pentavalent impurity is added to pure silicon, the resulting semiconductor is:

A. Insulating
B. P-type
C. N-type
D. Intrinsic

25 In an N-type semiconductor, the donor energy level is located:

A. Inside the conduction band
B. Just above the valence band
C. In the middle of the energy gap
D. Just below the conduction band

26 In a P-type semiconductor, the Fermi level moves:

A. Into the conduction band
B. Towards the valence band
C. Towards the conduction band
D. Remains at the center

27 The Law of Mass Action for semiconductors states that at equilibrium:

A.
B.
C.
D.

28 As the temperature of an extrinsic semiconductor increases significantly, the Fermi level:

A. Moves towards the center of the energy gap (intrinsic level)
B. Does not change
C. Disappears
D. Moves closer to the respective band edge

29 The total conductivity () of a semiconductor is given by:

A.
B.
C.
D.

30 What is the primary difference between Direct and Indirect band gap semiconductors?

A. The alignment of the minimum of conduction band and maximum of valence band in k-space
B. The width of the band gap
C. The type of doping used
D. The density of states

31 In a Direct Band Gap semiconductor, electron recombination results primarily in:

A. Emission of light (photons)
B. Crystal vibration only
C. Generation of magnetic fields
D. Emission of heat (phonons)

32 Which of the following is an example of an Indirect Band Gap semiconductor?

A. Silicon (Si)
B. Indium Phosphide (InP)
C. Cadmium Sulfide (CdS)
D. Gallium Arsenide (GaAs)

33 Why is Silicon not used for making LEDs?

A. It is too expensive
B. It has a direct band gap
C. It melts at low temperatures
D. It has an indirect band gap, leading to energy loss as heat

34 The basic principle of a Solar Cell is:

A. Photovoltaic effect
B. Thermionic emission
C. Photoconductive effect
D. Photoemissive effect

35 The I-V characteristic of a solar cell is typically drawn in which quadrant?

A. First quadrant (Power dissipation)
B. Second quadrant
C. Fourth quadrant (Power generation)
D. Third quadrant

36 The 'Fill Factor' of a solar cell represents:

A. The ratio of maximum obtainable power to the product of open circuit voltage and short circuit current
B. The ratio of open circuit voltage to short circuit current
C. The efficiency of light absorption
D. The thickness of the depletion region

37 In the Fermi-Dirac distribution, if and , then is:

A. Infinite
B. 0.5
C. 0
D. 1

38 The density of states for free electrons in a 3D metal is proportional to:

A.
B.
C.
D.

39 Which velocity is associated with the random motion of electrons at Fermi level?

A. Drift velocity
B. Fermi velocity
C. Group velocity
D. Phase velocity

40 In a p-n junction solar cell, electron-hole pairs are generated primarily in:

A. The neutral p-region only
B. The depletion region (space charge region)
C. The metal contacts
D. The neutral n-region only

41 The efficiency of a solar cell is defined as:

A. Voltage Output / Light Intensity
B. Fill Factor Temperature
C. Max Electrical Power Output / Optical Power Input
D. Output Current / Input Current

42 For a p-type semiconductor, the concentration of holes () relates to the acceptor concentration () approximately as:

A.
B.
C.
D.

43 The mean free path of an electron is:

A. The total distance traveled in one second
B. The distance between the nucleus and the electron
C. The average distance traveled between two successive collisions
D. The average time between collisions

44 Mobility () of a charge carrier is defined as:

A. Velocity per unit electric field
B. Current per unit area
C. Force per unit charge
D. Acceleration per unit time

45 The unit of Hall coefficient () is:

A.
B.
C.
D.

46 What happens to the resistivity of a semiconductor as temperature increases?

A. It remains constant
B. It increases linearly
C. It increases exponentially
D. It decreases

47 In the Kronig-Penney model (origin of bands), the potential is approximated as:

A. A simple harmonic oscillator potential
B. A periodic array of rectangular potential wells/barriers
C. A Coulomb potential
D. A constant zero potential

48 Which material is commonly used as a dopant to create P-type Silicon?

A. Arsenic (As)
B. Boron (B)
C. Antimony (Sb)
D. Phosphorus (P)

49 The open-circuit voltage () of a solar cell:

A. Decreases with temperature
B. Is zero at room temperature
C. Increases with temperature
D. Is independent of temperature

50 If the effective mass of an electron is usually denoted , and the free electron mass is , in most semiconductors:

A. always
B. can be smaller or larger than
C. is always zero
D. is imaginary