In a series circuit with two resistors $R_1$ and $R_2$ connected to a voltage source $V$, what is the voltage across $R_1$ according to the Voltage Division Rule?

$V_{R1} = V \cdot \frac{R_1}{R_1 + R_2}$

$V_{R1} = V \cdot \frac{R_2}{R_1 + R_2}$

$V_{R1} = V \cdot \frac{R_1}{R_2}$

For two resistors $R_1$ and $R_2$ connected in parallel, if the total current is $I_{total}$, the current through $R_1$ is given by:

$I_1 = I_{total} \cdot \frac{R_2}{R_1 + R_2}$

$I_1 = I_{total} \cdot \frac{R_1}{R_1 + R_2}$

$I_1 = I_{total} \cdot \frac{R_1}{R_2}$

$I_1 = I_{total} \cdot (R_1 + R_2)$

ECE249 Unit 1: Fundamentals of Electrical Laws, Semiconductor Devices and its Applications - MCQ Practice | B. Tech. CSE

1 $Which of the following correctly states Ohm's Law?$

A.

B.

C.

D.

2 $Ohm's law is applicable to which of the following?$

A.

Semi-conductors

B.

Linear circuits

C.

Electrolytes

D.

Vacuum tubes

3 $Kirchhoff's Current Law (KCL) is based on the principle of conservation of:$

A.

Momentum

B.

Energy

C.

Charge

D.

Voltage

4 $According to Kirchhoff's Voltage Law (KVL), the algebraic sum of voltage drops and EMFs in a closed loop is:$

A.

One

B.

Infinite

C.

Equal to the current

D.

Zero

5 $In a series circuit with two resistors and connected to a voltage source, what is the voltage across according to the Voltage Division Rule?$

A.

B.

C.

D.

6 $For two resistors and connected in parallel, if the total current is, the current through is given by:$

A.

B.

C.

D.

7 $What is the unit of electrical conductance?$

A.

Henry ()

B.

Ohm ()

C.

Volt ()

D.

Siemens ()

8 $Kirchhoff’s Voltage Law (KVL) deals with the conservation of:$

A.

Energy

B.

Charge

C.

Momentum

D.

Mass

9 $Three resistors of,, and are connected in series. If the total voltage is, what is the current in the circuit?$

A.

B.

C.

D.

10 $Which material is classified as a semiconductor?$

A.

Copper

B.

Aluminum

C.

Glass

D.

Silicon

11 $How many valence electrons does a pure Silicon atom have?$

A.

4

B.

1

C.

5

D.

3

12 $An intrinsic semiconductor is:$

A.

A pure semiconductor without any impurity

B.

A highly conductive metal

C.

A semiconductor doped with trivalent impurity

D.

A semiconductor doped with pentavalent impurity

13 $To obtain an N-type semiconductor, intrinsic silicon must be doped with:$

A.

Trivalent impurity

B.

Tetravalent impurity

C.

Pentavalent impurity

D.

No impurity

14 $Which of the following is a Trivalent impurity (Acceptor)?$

A.

Antimony

B.

Boron

C.

Phosphorus

D.

Arsenic

15 $In a P-type semiconductor, the majority charge carriers are:$

A.

Neutrons

B.

Electrons

C.

Ions

D.

Holes

16 $What happens to the resistance of a pure semiconductor as temperature increases?$

A.

It remains constant

B.

It increases

C.

It fluctuates randomly

D.

It decreases

17 $The forbidden energy gap for Silicon at room temperature is approximately:$

A.

B.

C.

D.

18 $A PN junction diode allows current to flow easily in:$

A.

Neither bias

B.

Forward bias only

C.

Reverse bias only

D.

Both forward and reverse bias

19 $The region near the PN junction which is free of mobile charge carriers is called:$

A.

Neutral region

B.

Doped region

C.

Depletion region

D.

Conductive region

20 $When a PN junction is forward biased, the width of the depletion layer:$

A.

Decreases

B.

Increases

C.

Remains the same

D.

Becomes infinite

21 $What is the typical knee voltage (cut-in voltage) for a Silicon diode?$

A.

B.

C.

D.

22 $The small current flowing through a diode during reverse bias is due to:$

A.

Minority carriers

B.

Immobile ions

C.

Majority carriers

D.

Metal contacts

23 $Which component is used to convert AC to DC?$

A.

Inverter

B.

Rectifier

C.

Amplifier

D.

Transformer

24 $What is the maximum efficiency of a Half-Wave Rectifier?$

A.

B.

C.

D.

25 $How many diodes are required for a bridge full-wave rectifier?$

A.

8

B.

4

C.

2

D.

1

26 $The Peak Inverse Voltage (PIV) rating for a diode in a Center-Tapped Full-Wave Rectifier is:$

A.

B.

C.

D.

27 $The ripple factor of a standard Full-Wave Rectifier is:$

A.

0.10

B.

1.21

C.

0.48

D.

0.81

28 $Ideally, when a diode acts as a switch, in the ON state it acts as:$

A.

A capacitor

B.

A short circuit ()

C.

A voltage source

D.

An open circuit ()

29 $BJT stands for:$

A.

Base Junction Terminal

B.

Bi-directional Junction Transistor

C.

Basic Junction Transfer

D.

Bipolar Junction Transistor

30 $The three terminals of a BJT are:$

A.

Emitter, Base, Collector

B.

Anode, Cathode, Gate

C.

Input, Output, Ground

D.

Drain, Source, Gate

31 $In a BJT, which region is the most heavily doped?$

A.

Emitter

B.

Base

C.

All are equally doped

D.

Collector

32 $Which BJT region is physically the widest (largest area)?$

A.

Emitter

B.

Depletion region

C.

Collector

D.

Base

33 $In a BJT operating in the active region, the relationship between currents is:$

A.

B.

C.

D.

34 $The symbol for current gain in the Common Emitter (CE) configuration is:$

A.

(Delta)

B.

(Beta)

C.

(Gamma)

D.

(Alpha)

35 $For a BJT to operate in the Active region (used for amplification):$

A.

Emitter-Base fwd biased, Collector-Base fwd biased

B.

Emitter-Base rev biased, Collector-Base rev biased

C.

Emitter-Base rev biased, Collector-Base fwd biased

D.

Emitter-Base fwd biased, Collector-Base rev biased

36 $If both junctions of a BJT are forward biased, the transistor is in:$

A.

Cut-off region

B.

Saturation region

C.

Breakdown region

D.

Active region

37 $The relationship between and is given by:$

A.

B.

C.

D.

38 $In Common Emitter (CE) configuration output characteristics, the curve is plotted between:$

A.

and

B.

and

C.

and

D.

and

39 $The base region of a BJT is:$

A.

Thin and lightly doped

B.

Thin and heavily doped

C.

Thick and lightly doped

D.

Thick and heavily doped

40 $If a BJT is used as an open switch, it operates in the:$

A.

Reverse active region

B.

Saturation region

C.

Active region

D.

Cut-off region

41 $What is the Peak Inverse Voltage (PIV) of a Bridge Rectifier?$

A.

B.

C.

D.

42 $Which statement is true regarding Extrinsic semiconductors?$

A.

Number of electrons always equals number of holes

B.

They are insulators at room temperature

C.

Doping increases the number of charge carriers

D.

Conductivity is lower than intrinsic semiconductors

43 $In a NPN transistor, the arrow on the emitter symbol points:$

A.

Outward

B.

Downward

C.

Upward

D.

Inward

44 $Which law states ?$

A.

Ohm's Law

B.

Kirchhoff's Current Law

C.

Kirchhoff's Voltage Law

D.

Faraday's Law

45 $The input characteristics of a CE transistor configuration resemble:$

A.

A reverse biased diode

B.

A capacitor

C.

A linear resistor

D.

A forward biased diode

46 $What is the value of for a transistor having ?$

A.

0.99

B.

0.9

C.

1.01

D.

100

47 $A silicon diode has a reverse saturation current of 10 nA. If the temperature increases, this current will:$

A.

Change direction

B.

Decrease

C.

Remain zero

D.

Increase

48 $In a voltage divider circuit with and across a source, the voltage across is:$

A.

B.

C.

D.

49 $Which type of charge carrier has higher mobility in Silicon?$

A.

Both have equal mobility

B.

Ions

C.

Holes

D.

Electrons

50 $When applying KVL to a loop, if we move across a resistor in the direction of the current, the voltage change is:$

A.

Positive ()

B.

Negative ()

C.

Zero

D.

Positive ()

Unit 1: Fundamentals of Electrical Laws, Semiconductor Devices and its Applications - Practice Quiz

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