1According to the free electron theory, conduction electrons in a metal are treated mainly as:
Free electron theory (introduction)
Easy
A.Waves confined inside the nucleus
B.Positive ions moving through the lattice
C.Free particles moving through the metal
D.Particles fixed to individual atoms
Correct Answer: Free particles moving through the metal
Explanation:
Free electron theory treats conduction electrons as mobile particles that can move throughout the metal.
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2What primarily limits the motion of free electrons in a real metal?
Free electron theory (introduction)
Easy
A.Attraction between positive ions
B.Expansion of the metal surface
C.Collisions with the crystal lattice
D.Absence of available electrons
Correct Answer: Collisions with the crystal lattice
Explanation:
Electrons undergo collisions with lattice ions, imperfections, and other scattering centers.
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3Drift current in a semiconductor is produced by:
Diffusion and drift current (qualitative)
Easy
A.A constant crystal temperature
B.A carrier concentration gradient
C.An applied electric field
D.A uniform carrier distribution
Correct Answer: An applied electric field
Explanation:
An electric field causes charge carriers to acquire an average drift velocity, producing drift current.
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4Diffusion current occurs when charge carriers move from:
Diffusion and drift current (qualitative)
Easy
A.Lower energy to higher energy only
B.Lower concentration to higher concentration
C.Higher concentration to lower concentration
D.One electrode to an identical electrode
Correct Answer: Higher concentration to lower concentration
Explanation:
Diffusion is the net movement of carriers from a region of high concentration to one of low concentration.
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5At absolute zero, the Fermi energy is the energy of the:
Fermi energy
Easy
A.Lowest unoccupied hole state
B.Lowest occupied electron state
C.Highest occupied electron state
D.Highest available lattice vibration
Correct Answer: Highest occupied electron state
Explanation:
At , electrons fill all states up to the Fermi energy .
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6At , electron states with energy below the Fermi energy are:
Fermi energy
Easy
A.Half occupied
B.Randomly occupied
C.Completely empty
D.Completely occupied
Correct Answer: Completely occupied
Explanation:
At absolute zero, all allowed states below are occupied and those above are empty.
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7Which expression represents the Fermi-Dirac distribution function?
Fermi-Dirac distribution function
Easy
A.
B.
C.
D.
Correct Answer:
Explanation:
The Fermi-Dirac function gives the probability that an available state of energy is occupied by an electron.
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8For any temperature, the occupation probability at is:
Fermi-Dirac distribution function
Easy
A.
B.
C.
D.
Correct Answer:
Explanation:
Substituting into the Fermi-Dirac function gives .
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9The density of states describes the number of:
Density of states (qualitative)
Easy
A.Atoms present per unit surface area
B.Allowed states per unit energy range
C.Electrons moving per unit time
D.Collisions occurring per unit distance
Correct Answer: Allowed states per unit energy range
Explanation:
The density of states indicates how many quantum states are available within a given energy interval.
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10For free electrons in a three-dimensional solid, the density of states generally varies with energy as:
Density of states (qualitative)
Easy
A.
B.
C.
D.
Correct Answer:
Explanation:
For a three-dimensional free-electron system, the density of states is proportional to .
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11The energy range between the valence band and conduction band containing no allowed electron states is called the:
Band theory of solids
Easy
A.Lattice vibration band
B.Electron affinity level
C.Forbidden energy gap
D.Carrier diffusion region
Correct Answer: Forbidden energy gap
Explanation:
The forbidden energy gap separates the valence band from the conduction band.
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12A solid usually behaves as a conductor when its:
Band theory of solids
Easy
A.Conduction band remains entirely empty
B.Valence band is completely isolated
C.Forbidden energy gap is very wide
D.Valence and conduction bands overlap
Correct Answer: Valence and conduction bands overlap
Explanation:
Band overlap provides nearby empty states, allowing electrons to move easily under an electric field.
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13Compared with an insulator, a semiconductor generally has:
Semiconductors and insulators
Easy
A.No conduction energy band
B.A larger forbidden energy gap
C.A smaller forbidden energy gap
D.No valence energy band
Correct Answer: A smaller forbidden energy gap
Explanation:
A semiconductor has a relatively small band gap, so thermal energy can excite some electrons into the conduction band.
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14In an ideal intrinsic semiconductor, the Fermi level lies approximately:
Fermi level for intrinsic and extrinsic semiconductors
Easy
A.Inside the valence band
B.Inside the conduction band
C.Above the conduction band
D.Near the middle of the band gap
Correct Answer: Near the middle of the band gap
Explanation:
For an ideal intrinsic semiconductor, electron and hole concentrations are equal, placing near the middle of the gap.
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15In an n-type semiconductor, the Fermi level shifts toward the:
Fermi level for intrinsic and extrinsic semiconductors
Easy
A.Bottom of the valence band
B.Center of the nucleus
C.Conduction band
D.Valence band
Correct Answer: Conduction band
Explanation:
Donor impurities increase the electron concentration, moving the Fermi level closer to the conduction band.
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16In a p-type semiconductor, the Fermi level shifts toward the:
Fermi level for intrinsic and extrinsic semiconductors
Easy
A.Vacuum energy level
B.Top of the conduction band
C.Valence band
D.Conduction band
Correct Answer: Valence band
Explanation:
Acceptor impurities increase the hole concentration, moving the Fermi level closer to the valence band.
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17In a direct band-gap semiconductor, the conduction-band minimum and valence-band maximum occur at:
Direct and indirect band-gap semiconductors
Easy
A.Different crystal momenta
B.Different lattice temperatures
C.The same electron energy
D.The same crystal momentum
Correct Answer: The same crystal momentum
Explanation:
A direct transition conserves crystal momentum because the band extrema occur at the same wave vector .
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18An electron transition across an indirect band gap usually requires the participation of a:
Direct and indirect band-gap semiconductors
Easy
A.Positron
B.Neutron
C.Proton
D.Phonon
Correct Answer: Phonon
Explanation:
A phonon supplies or absorbs the crystal momentum needed during an indirect transition.
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19A hole in the valence band is commonly treated as a particle with:
Concept of effective mass: electrons and holes
Easy
A.Neutral charge and effective mass
B.Positive charge and effective mass
C.Positive charge and zero mass
D.Negative charge and zero mass
Correct Answer: Positive charge and effective mass
Explanation:
A missing valence electron behaves like a mobile carrier with positive charge and an associated effective mass.
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20For a material with one type of carrier of concentration and charge , the Hall coefficient is:
Hall effect (with derivation)
Easy
A.
B.
C.
D.
Correct Answer:
Explanation:
Balancing magnetic and electric forces gives . Using , we obtain .
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21According to the Drude free-electron theory, what happens to the electrical conductivity of a metal if the mean relaxation time doubles while the electron density remains constant?
Free electron theory (introduction)
Medium
A.It remains unchanged
B.It doubles
C.It becomes half
D.It becomes four times
Correct Answer: It doubles
Explanation:
Drude theory gives . Therefore, doubling the relaxation time doubles the conductivity.
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22Electron concentration is higher at the left end of a semiconductor than at the right end. An electric field is applied from left to right. How are the conventional electron diffusion and drift currents directed?
Diffusion and drift current (qualitative)
Medium
A.Diffusion flows right; drift flows left
B.Both currents flow from left to right
C.Diffusion flows left; drift flows right
D.Both currents flow from right to left
Correct Answer: Diffusion flows left; drift flows right
Explanation:
Electrons diffuse toward the right, so their conventional diffusion current points left. The electric field drives electrons left, producing conventional drift current toward the right.
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23For a three-dimensional free-electron gas at , . If the electron concentration becomes eight times its original value, the Fermi energy becomes:
Fermi energy
Medium
A.Four times the original value
B.Eight times the original value
C.Twice the original value
D.Sixteen times the original value
Correct Answer: Four times the original value
Explanation:
Since , the new value is .
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24At , which statement correctly describes electron occupation in a metal relative to its Fermi energy ?
Fermi energy
Medium
A.All states below are occupied
B.States on both sides are equally occupied
C.Only states exactly at are occupied
D.All states above are occupied
Correct Answer: All states below are occupied
Explanation:
At absolute zero, electrons fill all available states up to , while states above remain empty.
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25What is the probability that an available state at is occupied by an electron at any nonzero temperature?
Fermi-Dirac distribution function
Medium
A.
B.
C.
D.
Correct Answer:
Explanation:
Using , setting gives .
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26If at a particular temperature, what is at the same temperature?
Fermi-Dirac distribution function
Medium
A.
B.
C.
D.
Correct Answer:
Explanation:
The Fermi-Dirac function satisfies . Thus, the probability is .
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27Near the bottom of a three-dimensional parabolic conduction band, the density of states varies as . What is the ratio ?
Density of states (qualitative)
Medium
A.
B.
C.
D.
Correct Answer:
Explanation:
The ratio is . Thus, the density of states doubles.
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28Two conduction bands have the same band-edge energy, but band X has a larger electron effective mass than band Y. Near the band edge, which band generally has the larger three-dimensional density of states?
Density of states (qualitative)
Medium
A.Neither has available states
B.Band X
C.Both are equal
D.Band Y
Correct Answer: Band X
Explanation:
For a parabolic three-dimensional band, . A larger effective mass therefore gives a larger density of states.
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29A solid has a completely filled valence band and a partially filled conduction band at . How should it be classified using band theory?
Band theory of solids
Medium
A.As a dielectric with no carriers
B.As an insulator
C.As a conductor
D.As an intrinsic semiconductor
Correct Answer: As a conductor
Explanation:
A partially filled band contains occupied states next to available empty states, allowing electrons to gain momentum and conduct.
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30Why does a completely filled energy band normally make no net contribution to electrical conduction?
Band theory of solids
Medium
A.Its electrons have infinite effective mass
B.The band contains no allowed states
C.Opposite-velocity states cancel each other
D.Its electrons have no electric charge
Correct Answer: Opposite-velocity states cancel each other
Explanation:
In a filled band, every occupied state with one velocity has an occupied state with the opposite velocity, so the net current is zero.
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31Two pure solids have full valence bands at . Solid P has a band gap of , while solid Q has a band gap of . At room temperature, which behavior is most likely?
Semiconductors and insulators
Medium
A.P behaves as an insulator; Q as a semiconductor
B.Both have approximately equal conductivity
C.Both behave as good metallic conductors
D.P behaves as a semiconductor; Q as an insulator
Correct Answer: P behaves as a semiconductor; Q as an insulator
Explanation:
Thermal excitation can create appreciable carriers across the smaller gap of P, whereas the much larger gap of Q strongly suppresses carrier generation.
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32An intrinsic semiconductor has , where and are the effective densities of states. Relative to the exact middle of the band gap, where is its intrinsic Fermi level?
Fermi level for intrinsic and extrinsic semiconductors
Medium
A.Slightly toward the conduction band
B.Exactly at the valence-band edge
C.Slightly toward the valence band
D.Exactly at the conduction-band edge
Correct Answer: Slightly toward the valence band
Explanation:
The intrinsic level is . If , the logarithmic term is negative.
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33A silicon sample is doped with donor atoms, and the donors are almost fully ionized. Compared with intrinsic silicon at the same temperature, the Fermi level moves:
Fermi level for intrinsic and extrinsic semiconductors
Medium
A.Toward the valence band
B.To the middle of the band gap
C.Toward the conduction band
D.Outside both allowed bands
Correct Answer: Toward the conduction band
Explanation:
Donor doping increases the electron concentration. The Fermi level consequently shifts upward toward the conduction-band edge.
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34A semiconductor initially contains equal concentrations of donors and acceptors. Additional acceptors are then introduced so that acceptors dominate. What is the expected Fermi-level shift?
Fermi level for intrinsic and extrinsic semiconductors
Medium
A.Toward the conduction band
B.Toward the vacuum level
C.Toward the valence band
D.Toward the donor energy only
Correct Answer: Toward the valence band
Explanation:
Excess acceptors make holes the majority carriers, producing p-type material and shifting the Fermi level toward the valence band.
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35Why is a direct band-gap semiconductor generally more efficient for light emission than an indirect band-gap semiconductor?
Direct and indirect band-gap semiconductors
Medium
A.Its valence band is always partially empty
B.Electron-hole recombination requires two phonons
C.Electron-hole recombination conserves momentum without a phonon
D.Its conduction band contains no electron states
Correct Answer: Electron-hole recombination conserves momentum without a phonon
Explanation:
In a direct-gap material, the conduction-band minimum and valence-band maximum occur at the same crystal momentum, enabling efficient photon emission.
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36During an optical transition across the fundamental gap of an indirect semiconductor, which additional participant is generally required to conserve crystal momentum?
Direct and indirect band-gap semiconductors
Medium
A.A neutron
B.A phonon
C.A second hole
D.A proton
Correct Answer: A phonon
Explanation:
A phonon supplies or absorbs the momentum difference between band extrema located at different wave vectors.
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37For a band described by , how does stronger positive curvature of the - relation affect the electron effective mass?
Concept of effective mass: electrons and holes
Medium
A.It makes the effective mass infinite
B.It decreases the effective mass
C.It increases the effective mass
D.It leaves the effective mass unchanged
Correct Answer: It decreases the effective mass
Explanation:
Effective mass is inversely proportional to band curvature. A more strongly curved band therefore corresponds to a smaller .
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38Near the maximum of a valence band, the band curvature is negative. Why is transport commonly described using holes with positive effective mass?
Concept of effective mass: electrons and holes
Medium
A.A missing electron responds like a positive carrier
B.The band curvature changes sign during conduction
C.A hole is a positively charged atomic nucleus
D.A valence electron permanently loses its charge
Correct Answer: A missing electron responds like a positive carrier
Explanation:
The collective response of an almost full valence band is conveniently represented by missing electrons, or holes, which carry positive charge and positive effective mass.
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39A material has one dominant type of carrier and a measured Hall coefficient . Using , what are the carrier type and concentration?
Hall effect (with derivation)
Medium
A.Electrons;
B.Holes;
C.Holes;
D.Electrons;
Correct Answer: Electrons;
Explanation:
A negative Hall coefficient indicates electrons. For one carrier type, .
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40A rectangular n-type sample carries in a magnetic field . Its carrier concentration is , and its thickness along the magnetic field is . What is the magnitude of its Hall voltage? Use .
Hall effect (with derivation)
Medium
A.
B.
C.
D.
Correct Answer:
Explanation:
Balancing magnetic and electric forces gives . Substitution yields .
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41In a three-dimensional Drude-Sommerfeld metal, the electron density changes from to while the relaxation time changes from to . The electron mass remains constant. By what factors do the conductivity , Fermi energy , and mean free path change, respectively?
Free electron theory (introduction)
Hard
A.
B.
C.
D.
Correct Answer:
Explanation:
Since , it increases by . Also, increases by , while remains unchanged.
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42A nondegenerate electron gas at is in equilibrium in an electrostatic potential satisfying . Using the Einstein relation and zero net electron current, what is ?
Diffusion and drift current (qualitative)
Hard
A.
B.
C.
D.
Correct Answer:
Explanation:
Setting and using gives .
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43For a three-dimensional degenerate electron gas with parabolic dispersion, the carrier density increases by a factor of while its effective mass increases by a factor of . What is the resulting factor of change in measured from the band minimum?
Fermi energy
Hard
A.
B.
C.
D.
Correct Answer:
Explanation:
For a parabolic band, . Therefore, the factor is .
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44Let be the chemical potential and . Which relation is exactly satisfied by the Fermi-Dirac function at every nonzero temperature?
Fermi-Dirac distribution function
Hard
A.
B.
C.
D.
Correct Answer:
Explanation:
Substitution into shows that occupations at equal energy offsets on opposite sides of sum to unity.
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45At , a state has Fermi-Dirac occupation probability . Approximately how far above the chemical potential is that state?
Fermi-Dirac distribution function
Hard
A.
B.
C.
D.
Correct Answer:
Explanation:
From , one obtains .
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46A semiconductor has six equivalent ellipsoidal conduction-band valleys. Each valley has density-of-states mass . If the total density of states is represented by one equivalent parabolic valley of mass , what is ?
Density of states (qualitative)
Hard
A.
B.
C.
D.
Correct Answer:
Explanation:
The total density of states scales as . Equating this to gives .
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47For parabolic bands, which statement correctly compares the density of states immediately above a band edge in one, two, and three dimensions?
Density of states (qualitative)
Hard
A.It vanishes in 1D, has a finite step in 2D, and diverges in 3D.
B.It is constant in 1D, linear in 2D, and quadratic in 3D.
C.It has the same square-root onset in every dimension because dimensionality changes only the number of occupied states, not their energy dependence.
D.It diverges in 1D, has a finite step in 2D, and vanishes in 3D.
Correct Answer: It diverges in 1D, has a finite step in 2D, and vanishes in 3D.
Explanation:
Near the edge, , is constant, and .
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48Why does a completely filled, isolated energy band carry no net current under the usual semiclassical band description?
Band theory of solids
Hard
A.Its relaxation time is infinite, so the electrons cannot accelerate.
B.Group velocities cancel when summed over the entire Brillouin zone.
C.Current vanishes only because Bragg reflection permanently localizes each electron at a lattice site and eliminates all motion within the filled band.
D.Every electron shifts to the same wave vector without creating vacancies.
Correct Answer: Group velocities cancel when summed over the entire Brillouin zone.
Explanation:
For a filled band, all allowed states are occupied. The integral of over the Brillouin zone is zero because the band energy is periodic.
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49A one-dimensional tight-binding band is with . If increased orbital overlap doubles without changing , how do the bandwidth and effective mass at change?
Band theory of solids
Hard
A.The bandwidth doubles and the effective mass doubles.
B.The bandwidth doubles and the effective mass halves.
C.The bandwidth halves and the effective mass doubles.
D.The bandwidth remains fixed and the effective mass halves.
Correct Answer: The bandwidth doubles and the effective mass halves.
Explanation:
The bandwidth is , while at . Thus doubling doubles the bandwidth and halves .
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50Two intrinsic solids have identical effective densities of states and carrier mobilities, but their band gaps are and . At , approximately how many times larger is the conductivity of the smaller-gap solid?
Semiconductors and insulators
Hard
A. times
B. times
C. times
D. times
Correct Answer: times
Explanation:
Intrinsic conductivity scales as . The ratio is .
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51An intrinsic semiconductor has parabolic bands with . Ignoring additional valley degeneracy, where is its intrinsic Fermi level relative to the middle of the band gap?
Fermi level for intrinsic and extrinsic semiconductors
Hard
A.Exactly at midgap for every effective-mass ratio
B. toward the conduction band
C. toward the conduction band
D. toward the valence band
Correct Answer: toward the conduction band
Explanation:
The intrinsic level is . A larger hole mass shifts it toward .
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52At , an -type semiconductor has , , and . Assuming complete ionization, negligible holes, and nondegenerate statistics, where is ?
Fermi level for intrinsic and extrinsic semiconductors
Hard
A. below
B. below
C. below
D. above
Correct Answer: below
Explanation:
Here . Thus .
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53In a nondegenerate semiconductor at , doping moves the Fermi level above the intrinsic level. What is the approximate ratio ?
Fermi level for intrinsic and extrinsic semiconductors
Hard
A.
B.
C.
D.
Correct Answer:
Explanation:
Since and , .
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54Which statement best explains why radiative recombination is generally much faster in a direct-gap semiconductor than in an indirect-gap semiconductor?
Direct and indirect band-gap semiconductors
Hard
A.A direct transition occurs because the photon supplies an arbitrarily large crystal momentum, whereas an indirect transition fails because phonons carry essentially no momentum.
B.A direct-gap material always has a substantially smaller band gap.
C.An indirect transition is forbidden by energy conservation at every temperature.
D.A direct transition conserves crystal momentum without requiring a phonon.
Correct Answer: A direct transition conserves crystal momentum without requiring a phonon.
Explanation:
In a direct-gap material, the band extrema occur at the same crystal momentum. An indirect transition usually requires a phonon to provide the momentum difference.
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55For an indirect semiconductor with band gap and a relevant phonon energy , what are the ideal absorption thresholds for a phonon-absorption process and a phonon-emission process, respectively?
Direct and indirect band-gap semiconductors
Hard
A. and
B. and
C. and
D. and
Correct Answer: and
Explanation:
Absorbing a phonon supplies energy , reducing the required photon energy to . Emitting a phonon requires photon energy .
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56Near a valence-band maximum, the electron energy is with . Which effective-mass interpretation is correct?
Concept of effective mass: electrons and holes
Hard
A.Both the electron and hole have mass and charge .
B.Both the electron and hole have mass and charge .
C., while the hole has and charge .
D., while the hole has and charge .
Correct Answer: , while the hole has and charge .
Explanation:
The negative curvature gives the valence electron a negative effective mass. Missing valence electrons are equivalently described as positively charged holes with positive mass.
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57An anisotropic parabolic band has . For a quasiparticle of charge in a field , which pair correctly gives its acceleration and density-of-states mass?
Concept of effective mass: electrons and holes
Hard
A. and
B. and
C. and
D. and
Correct Answer: and
Explanation:
Acceleration along a principal axis uses that axis's effective mass. The ellipsoidal density-of-states prefactor is reproduced by the geometric-mean mass.
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58A single-carrier -type slab carries conventional current density in a magnetic field . Taking as the transverse direction, what are the Hall field and Hall coefficient?
Hall effect (with derivation)
Hard
A. and
B. and
C. and
D. and
Correct Answer: and
Explanation:
Force balance gives . For electrons, , yielding and .
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59An intrinsic semiconductor has and electron mobility . In the weak-field limit, what is its Hall coefficient?
Hall effect (with derivation)
Hard
A.
B.
C.
D.
Correct Answer:
Explanation:
Using with and gives .
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60A single-carrier sample has Hall coefficient and conductivity . What are its carrier density and mobility?
Hall effect (with derivation)
Hard
A.,
B.,
C.,
D.,
Correct Answer: ,
Explanation:
For one carrier type, and .
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