Unit 5: Solid State Physics - Practice Quiz

PHY109 — Engineering Physics 60 Questions
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1 According to the free electron theory, conduction electrons in a metal are treated mainly as:

Free electron theory (introduction) Easy
A. Waves confined inside the nucleus
B. Positive ions moving through the lattice
C. Free particles moving through the metal
D. Particles fixed to individual atoms

2 What primarily limits the motion of free electrons in a real metal?

Free electron theory (introduction) Easy
A. Attraction between positive ions
B. Expansion of the metal surface
C. Collisions with the crystal lattice
D. Absence of available electrons

3 Drift current in a semiconductor is produced by:

Diffusion and drift current (qualitative) Easy
A. A constant crystal temperature
B. A carrier concentration gradient
C. An applied electric field
D. A uniform carrier distribution

4 Diffusion current occurs when charge carriers move from:

Diffusion and drift current (qualitative) Easy
A. Lower energy to higher energy only
B. Lower concentration to higher concentration
C. Higher concentration to lower concentration
D. One electrode to an identical electrode

5 At absolute zero, the Fermi energy is the energy of the:

Fermi energy Easy
A. Lowest unoccupied hole state
B. Lowest occupied electron state
C. Highest occupied electron state
D. Highest available lattice vibration

6 At , electron states with energy below the Fermi energy are:

Fermi energy Easy
A. Half occupied
B. Randomly occupied
C. Completely empty
D. Completely occupied

7 Which expression represents the Fermi-Dirac distribution function?

Fermi-Dirac distribution function Easy
A.
B.
C.
D.

8 For any temperature, the occupation probability at is:

Fermi-Dirac distribution function Easy
A.
B.
C.
D.

9 The density of states describes the number of:

Density of states (qualitative) Easy
A. Atoms present per unit surface area
B. Allowed states per unit energy range
C. Electrons moving per unit time
D. Collisions occurring per unit distance

10 For free electrons in a three-dimensional solid, the density of states generally varies with energy as:

Density of states (qualitative) Easy
A.
B.
C.
D.

11 The energy range between the valence band and conduction band containing no allowed electron states is called the:

Band theory of solids Easy
A. Lattice vibration band
B. Electron affinity level
C. Forbidden energy gap
D. Carrier diffusion region

12 A solid usually behaves as a conductor when its:

Band theory of solids Easy
A. Conduction band remains entirely empty
B. Valence band is completely isolated
C. Forbidden energy gap is very wide
D. Valence and conduction bands overlap

13 Compared with an insulator, a semiconductor generally has:

Semiconductors and insulators Easy
A. No conduction energy band
B. A larger forbidden energy gap
C. A smaller forbidden energy gap
D. No valence energy band

14 In an ideal intrinsic semiconductor, the Fermi level lies approximately:

Fermi level for intrinsic and extrinsic semiconductors Easy
A. Inside the valence band
B. Inside the conduction band
C. Above the conduction band
D. Near the middle of the band gap

15 In an n-type semiconductor, the Fermi level shifts toward the:

Fermi level for intrinsic and extrinsic semiconductors Easy
A. Bottom of the valence band
B. Center of the nucleus
C. Conduction band
D. Valence band

16 In a p-type semiconductor, the Fermi level shifts toward the:

Fermi level for intrinsic and extrinsic semiconductors Easy
A. Vacuum energy level
B. Top of the conduction band
C. Valence band
D. Conduction band

17 In a direct band-gap semiconductor, the conduction-band minimum and valence-band maximum occur at:

Direct and indirect band-gap semiconductors Easy
A. Different crystal momenta
B. Different lattice temperatures
C. The same electron energy
D. The same crystal momentum

18 An electron transition across an indirect band gap usually requires the participation of a:

Direct and indirect band-gap semiconductors Easy
A. Positron
B. Neutron
C. Proton
D. Phonon

19 A hole in the valence band is commonly treated as a particle with:

Concept of effective mass: electrons and holes Easy
A. Neutral charge and effective mass
B. Positive charge and effective mass
C. Positive charge and zero mass
D. Negative charge and zero mass

20 For a material with one type of carrier of concentration and charge , the Hall coefficient is:

Hall effect (with derivation) Easy
A.
B.
C.
D.

21 According to the Drude free-electron theory, what happens to the electrical conductivity of a metal if the mean relaxation time doubles while the electron density remains constant?

Free electron theory (introduction) Medium
A. It remains unchanged
B. It doubles
C. It becomes half
D. It becomes four times

22 Electron concentration is higher at the left end of a semiconductor than at the right end. An electric field is applied from left to right. How are the conventional electron diffusion and drift currents directed?

Diffusion and drift current (qualitative) Medium
A. Diffusion flows right; drift flows left
B. Both currents flow from left to right
C. Diffusion flows left; drift flows right
D. Both currents flow from right to left

23 For a three-dimensional free-electron gas at , . If the electron concentration becomes eight times its original value, the Fermi energy becomes:

Fermi energy Medium
A. Four times the original value
B. Eight times the original value
C. Twice the original value
D. Sixteen times the original value

24 At , which statement correctly describes electron occupation in a metal relative to its Fermi energy ?

Fermi energy Medium
A. All states below are occupied
B. States on both sides are equally occupied
C. Only states exactly at are occupied
D. All states above are occupied

25 What is the probability that an available state at is occupied by an electron at any nonzero temperature?

Fermi-Dirac distribution function Medium
A.
B.
C.
D.

26 If at a particular temperature, what is at the same temperature?

Fermi-Dirac distribution function Medium
A.
B.
C.
D.

27 Near the bottom of a three-dimensional parabolic conduction band, the density of states varies as . What is the ratio ?

Density of states (qualitative) Medium
A.
B.
C.
D.

28 Two conduction bands have the same band-edge energy, but band X has a larger electron effective mass than band Y. Near the band edge, which band generally has the larger three-dimensional density of states?

Density of states (qualitative) Medium
A. Neither has available states
B. Band X
C. Both are equal
D. Band Y

29 A solid has a completely filled valence band and a partially filled conduction band at . How should it be classified using band theory?

Band theory of solids Medium
A. As a dielectric with no carriers
B. As an insulator
C. As a conductor
D. As an intrinsic semiconductor

30 Why does a completely filled energy band normally make no net contribution to electrical conduction?

Band theory of solids Medium
A. Its electrons have infinite effective mass
B. The band contains no allowed states
C. Opposite-velocity states cancel each other
D. Its electrons have no electric charge

31 Two pure solids have full valence bands at . Solid P has a band gap of , while solid Q has a band gap of . At room temperature, which behavior is most likely?

Semiconductors and insulators Medium
A. P behaves as an insulator; Q as a semiconductor
B. Both have approximately equal conductivity
C. Both behave as good metallic conductors
D. P behaves as a semiconductor; Q as an insulator

32 An intrinsic semiconductor has , where and are the effective densities of states. Relative to the exact middle of the band gap, where is its intrinsic Fermi level?

Fermi level for intrinsic and extrinsic semiconductors Medium
A. Slightly toward the conduction band
B. Exactly at the valence-band edge
C. Slightly toward the valence band
D. Exactly at the conduction-band edge

33 A silicon sample is doped with donor atoms, and the donors are almost fully ionized. Compared with intrinsic silicon at the same temperature, the Fermi level moves:

Fermi level for intrinsic and extrinsic semiconductors Medium
A. Toward the valence band
B. To the middle of the band gap
C. Toward the conduction band
D. Outside both allowed bands

34 A semiconductor initially contains equal concentrations of donors and acceptors. Additional acceptors are then introduced so that acceptors dominate. What is the expected Fermi-level shift?

Fermi level for intrinsic and extrinsic semiconductors Medium
A. Toward the conduction band
B. Toward the vacuum level
C. Toward the valence band
D. Toward the donor energy only

35 Why is a direct band-gap semiconductor generally more efficient for light emission than an indirect band-gap semiconductor?

Direct and indirect band-gap semiconductors Medium
A. Its valence band is always partially empty
B. Electron-hole recombination requires two phonons
C. Electron-hole recombination conserves momentum without a phonon
D. Its conduction band contains no electron states

36 During an optical transition across the fundamental gap of an indirect semiconductor, which additional participant is generally required to conserve crystal momentum?

Direct and indirect band-gap semiconductors Medium
A. A neutron
B. A phonon
C. A second hole
D. A proton

37 For a band described by , how does stronger positive curvature of the - relation affect the electron effective mass?

Concept of effective mass: electrons and holes Medium
A. It makes the effective mass infinite
B. It decreases the effective mass
C. It increases the effective mass
D. It leaves the effective mass unchanged

38 Near the maximum of a valence band, the band curvature is negative. Why is transport commonly described using holes with positive effective mass?

Concept of effective mass: electrons and holes Medium
A. A missing electron responds like a positive carrier
B. The band curvature changes sign during conduction
C. A hole is a positively charged atomic nucleus
D. A valence electron permanently loses its charge

39 A material has one dominant type of carrier and a measured Hall coefficient . Using , what are the carrier type and concentration?

Hall effect (with derivation) Medium
A. Electrons;
B. Holes;
C. Holes;
D. Electrons;

40 A rectangular n-type sample carries in a magnetic field . Its carrier concentration is , and its thickness along the magnetic field is . What is the magnitude of its Hall voltage? Use .

Hall effect (with derivation) Medium
A.
B.
C.
D.

41 In a three-dimensional Drude-Sommerfeld metal, the electron density changes from to while the relaxation time changes from to . The electron mass remains constant. By what factors do the conductivity , Fermi energy , and mean free path change, respectively?

Free electron theory (introduction) Hard
A.
B.
C.
D.

42 A nondegenerate electron gas at is in equilibrium in an electrostatic potential satisfying . Using the Einstein relation and zero net electron current, what is ?

Diffusion and drift current (qualitative) Hard
A.
B.
C.
D.

43 For a three-dimensional degenerate electron gas with parabolic dispersion, the carrier density increases by a factor of while its effective mass increases by a factor of . What is the resulting factor of change in measured from the band minimum?

Fermi energy Hard
A.
B.
C.
D.

44 Let be the chemical potential and . Which relation is exactly satisfied by the Fermi-Dirac function at every nonzero temperature?

Fermi-Dirac distribution function Hard
A.
B.
C.
D.

45 At , a state has Fermi-Dirac occupation probability . Approximately how far above the chemical potential is that state?

Fermi-Dirac distribution function Hard
A.
B.
C.
D.

46 A semiconductor has six equivalent ellipsoidal conduction-band valleys. Each valley has density-of-states mass . If the total density of states is represented by one equivalent parabolic valley of mass , what is ?

Density of states (qualitative) Hard
A.
B.
C.
D.

47 For parabolic bands, which statement correctly compares the density of states immediately above a band edge in one, two, and three dimensions?

Density of states (qualitative) Hard
A. It vanishes in 1D, has a finite step in 2D, and diverges in 3D.
B. It is constant in 1D, linear in 2D, and quadratic in 3D.
C. It has the same square-root onset in every dimension because dimensionality changes only the number of occupied states, not their energy dependence.
D. It diverges in 1D, has a finite step in 2D, and vanishes in 3D.

48 Why does a completely filled, isolated energy band carry no net current under the usual semiclassical band description?

Band theory of solids Hard
A. Its relaxation time is infinite, so the electrons cannot accelerate.
B. Group velocities cancel when summed over the entire Brillouin zone.
C. Current vanishes only because Bragg reflection permanently localizes each electron at a lattice site and eliminates all motion within the filled band.
D. Every electron shifts to the same wave vector without creating vacancies.

49 A one-dimensional tight-binding band is with . If increased orbital overlap doubles without changing , how do the bandwidth and effective mass at change?

Band theory of solids Hard
A. The bandwidth doubles and the effective mass doubles.
B. The bandwidth doubles and the effective mass halves.
C. The bandwidth halves and the effective mass doubles.
D. The bandwidth remains fixed and the effective mass halves.

50 Two intrinsic solids have identical effective densities of states and carrier mobilities, but their band gaps are and . At , approximately how many times larger is the conductivity of the smaller-gap solid?

Semiconductors and insulators Hard
A. times
B. times
C. times
D. times

51 An intrinsic semiconductor has parabolic bands with . Ignoring additional valley degeneracy, where is its intrinsic Fermi level relative to the middle of the band gap?

Fermi level for intrinsic and extrinsic semiconductors Hard
A. Exactly at midgap for every effective-mass ratio
B. toward the conduction band
C. toward the conduction band
D. toward the valence band

52 At , an -type semiconductor has , , and . Assuming complete ionization, negligible holes, and nondegenerate statistics, where is ?

Fermi level for intrinsic and extrinsic semiconductors Hard
A. below
B. below
C. below
D. above

53 In a nondegenerate semiconductor at , doping moves the Fermi level above the intrinsic level. What is the approximate ratio ?

Fermi level for intrinsic and extrinsic semiconductors Hard
A.
B.
C.
D.

54 Which statement best explains why radiative recombination is generally much faster in a direct-gap semiconductor than in an indirect-gap semiconductor?

Direct and indirect band-gap semiconductors Hard
A. A direct transition occurs because the photon supplies an arbitrarily large crystal momentum, whereas an indirect transition fails because phonons carry essentially no momentum.
B. A direct-gap material always has a substantially smaller band gap.
C. An indirect transition is forbidden by energy conservation at every temperature.
D. A direct transition conserves crystal momentum without requiring a phonon.

55 For an indirect semiconductor with band gap and a relevant phonon energy , what are the ideal absorption thresholds for a phonon-absorption process and a phonon-emission process, respectively?

Direct and indirect band-gap semiconductors Hard
A. and
B. and
C. and
D. and

56 Near a valence-band maximum, the electron energy is with . Which effective-mass interpretation is correct?

Concept of effective mass: electrons and holes Hard
A. Both the electron and hole have mass and charge .
B. Both the electron and hole have mass and charge .
C. , while the hole has and charge .
D. , while the hole has and charge .

57 An anisotropic parabolic band has . For a quasiparticle of charge in a field , which pair correctly gives its acceleration and density-of-states mass?

Concept of effective mass: electrons and holes Hard
A. and
B. and
C. and
D. and

58 A single-carrier -type slab carries conventional current density in a magnetic field . Taking as the transverse direction, what are the Hall field and Hall coefficient?

Hall effect (with derivation) Hard
A. and
B. and
C. and
D. and

59 An intrinsic semiconductor has and electron mobility . In the weak-field limit, what is its Hall coefficient?

Hall effect (with derivation) Hard
A.
B.
C.
D.

60 A single-carrier sample has Hall coefficient and conductivity . What are its carrier density and mobility?

Hall effect (with derivation) Hard
A. ,
B. ,
C. ,
D. ,