Unit 5 - Practice Quiz

PHY110 50 Questions
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1 In the classical free electron theory, the valence electrons in a metal are treated as:

A. A gas of free molecules moving randomly
B. Quantum mechanical wave packets
C. Fixed particles attached to nuclei
D. Particles moving in a periodic potential

2 What is the primary failure of the classical free electron theory (Drude-Lorentz theory)?

A. It could not explain Ohm's Law
B. It predicted incorrect values for specific heat and heat capacity of metals
C. It could not explain electrical conductivity
D. It failed to explain thermal conductivity

3 The Fermi energy () is defined as:

A. The minimum energy possessed by an electron at 0 K
B. The energy of the highest occupied quantum state at 0 K
C. The energy of the lowest occupied level at 0 K
D. The average energy of electrons at room temperature

4 According to the Fermi-Dirac distribution function, what is the probability of occupation of an energy state at any temperature ?

A. Undefined
B. 0.5
C. 0
D. 1

5 Which of the following expressions represents the Fermi-Dirac distribution function?

A.
B.
C.
D.

6 Drift current in a semiconductor is caused by:

A. Temperature gradient
B. Application of an external electric field
C. Magnetic field application
D. Concentration gradient of charge carriers

7 Diffusion current in a semiconductor flows from:

A. Lower potential to higher potential
B. Higher potential to lower potential
C. Lower concentration to higher concentration
D. Higher concentration to lower concentration

8 The relation between the diffusion coefficient () and mobility () is given by the Einstein relation:

A.
B.
C.
D.

9 In the band theory of solids, the formation of energy bands is primarily due to:

A. External magnetic fields
B. High temperature effects
C. Pauli exclusion principle and interaction of atoms in a crystal lattice
D. Electron-electron repulsion

10 The energy gap () represents:

A. The energy difference between the top of the conduction band and bottom of the valence band
B. The width of the conduction band
C. The energy difference between the bottom of the conduction band and the top of the valence band
D. The ionization energy of the atom

11 Which of the following characterizes an insulator?

A. Large forbidden energy gap ( eV)
B. Partially filled conduction band
C. Overlapping valence and conduction bands
D. Zero forbidden energy gap

12 The effective mass () of an electron in a solid is related to the curvature of the curve by:

A.
B.
C.
D.

13 If the curvature of the band () is negative near the top of the valence band, the effective mass is:

A. Zero
B. Negative
C. Positive
D. Infinite

14 A 'hole' in solid state physics is best described as:

A. A vacancy created by a missing electron in the valence band
B. A proton moving in the lattice
C. An electron in the conduction band
D. A positron

15 The Hall Effect is observed when a current-carrying conductor is placed in:

A. A parallel magnetic field
B. A transverse electric field
C. A vacuum chamber
D. A transverse magnetic field

16 The Hall Coefficient () is defined mathematically as:

A.
B.
C.
D.

17 For an n-type semiconductor, the Hall coefficient is:

A. Undefined
B. Positive
C. Negative
D. Zero

18 The formula for Hall coefficient in terms of carrier concentration is:

A.
B.
C.
D.

19 Which of the following parameters cannot be determined directly using the Hall Effect?

A. Band gap energy
B. Carrier concentration
C. Type of semiconductor (n-type or p-type)
D. Mobility of charge carriers

20 In the derivation of the Hall voltage , the Hall field exerts a force that balances the:

A. Friction force
B. Nuclear force
C. Gravitational force
D. Lorentz magnetic force

21 If the Hall voltage is , width of the specimen is , and thickness is , the Hall field is:

A.
B.
C.
D.

22 An intrinsic semiconductor at 0 K behaves as:

A. A perfect conductor
B. A perfect insulator
C. A superconductor
D. A semiconductor with low conductivity

23 The Fermi level in an intrinsic semiconductor at absolute zero is located:

A. Exactly in the middle of the forbidden energy gap
B. Inside the Conduction Band
C. Inside the Valence Band
D. Near the Conduction Band

24 When a pentavalent impurity is added to pure silicon, the resulting semiconductor is:

A. Intrinsic
B. Insulating
C. N-type
D. P-type

25 In an N-type semiconductor, the donor energy level is located:

A. Inside the conduction band
B. Just above the valence band
C. In the middle of the energy gap
D. Just below the conduction band

26 In a P-type semiconductor, the Fermi level moves:

A. Towards the conduction band
B. Remains at the center
C. Into the conduction band
D. Towards the valence band

27 The Law of Mass Action for semiconductors states that at equilibrium:

A.
B.
C.
D.

28 As the temperature of an extrinsic semiconductor increases significantly, the Fermi level:

A. Moves closer to the respective band edge
B. Does not change
C. Disappears
D. Moves towards the center of the energy gap (intrinsic level)

29 The total conductivity () of a semiconductor is given by:

A.
B.
C.
D.

30 What is the primary difference between Direct and Indirect band gap semiconductors?

A. The width of the band gap
B. The alignment of the minimum of conduction band and maximum of valence band in k-space
C. The density of states
D. The type of doping used

31 In a Direct Band Gap semiconductor, electron recombination results primarily in:

A. Emission of light (photons)
B. Emission of heat (phonons)
C. Generation of magnetic fields
D. Crystal vibration only

32 Which of the following is an example of an Indirect Band Gap semiconductor?

A. Cadmium Sulfide (CdS)
B. Gallium Arsenide (GaAs)
C. Silicon (Si)
D. Indium Phosphide (InP)

33 Why is Silicon not used for making LEDs?

A. It is too expensive
B. It has an indirect band gap, leading to energy loss as heat
C. It melts at low temperatures
D. It has a direct band gap

34 The basic principle of a Solar Cell is:

A. Photovoltaic effect
B. Photoconductive effect
C. Photoemissive effect
D. Thermionic emission

35 The I-V characteristic of a solar cell is typically drawn in which quadrant?

A. Fourth quadrant (Power generation)
B. Second quadrant
C. First quadrant (Power dissipation)
D. Third quadrant

36 The 'Fill Factor' of a solar cell represents:

A. The ratio of maximum obtainable power to the product of open circuit voltage and short circuit current
B. The thickness of the depletion region
C. The efficiency of light absorption
D. The ratio of open circuit voltage to short circuit current

37 In the Fermi-Dirac distribution, if and , then is:

A. 0
B. Infinite
C. 1
D. 0.5

38 The density of states for free electrons in a 3D metal is proportional to:

A.
B.
C.
D.

39 Which velocity is associated with the random motion of electrons at Fermi level?

A. Drift velocity
B. Group velocity
C. Phase velocity
D. Fermi velocity

40 In a p-n junction solar cell, electron-hole pairs are generated primarily in:

A. The neutral n-region only
B. The neutral p-region only
C. The depletion region (space charge region)
D. The metal contacts

41 The efficiency of a solar cell is defined as:

A. Voltage Output / Light Intensity
B. Fill Factor Temperature
C. Max Electrical Power Output / Optical Power Input
D. Output Current / Input Current

42 For a p-type semiconductor, the concentration of holes () relates to the acceptor concentration () approximately as:

A.
B.
C.
D.

43 The mean free path of an electron is:

A. The average distance traveled between two successive collisions
B. The average time between collisions
C. The distance between the nucleus and the electron
D. The total distance traveled in one second

44 Mobility () of a charge carrier is defined as:

A. Force per unit charge
B. Current per unit area
C. Acceleration per unit time
D. Velocity per unit electric field

45 The unit of Hall coefficient () is:

A.
B.
C.
D.

46 What happens to the resistivity of a semiconductor as temperature increases?

A. It remains constant
B. It decreases
C. It increases exponentially
D. It increases linearly

47 In the Kronig-Penney model (origin of bands), the potential is approximated as:

A. A constant zero potential
B. A simple harmonic oscillator potential
C. A periodic array of rectangular potential wells/barriers
D. A Coulomb potential

48 Which material is commonly used as a dopant to create P-type Silicon?

A. Phosphorus (P)
B. Arsenic (As)
C. Antimony (Sb)
D. Boron (B)

49 The open-circuit voltage () of a solar cell:

A. Is independent of temperature
B. Increases with temperature
C. Decreases with temperature
D. Is zero at room temperature

50 If the effective mass of an electron is usually denoted , and the free electron mass is , in most semiconductors:

A. always
B. is always zero
C. can be smaller or larger than
D. is imaginary