1Which of the following correctly states Ohm's Law?
A.
B.
C.
D.
Correct Answer:
Explanation:Ohm's Law states that the current flowing through a conductor is directly proportional to the voltage applied across its ends, provided the physical conditions remain constant. Mathematically, or .
Incorrect! Try again.
2Ohm's law is applicable to which of the following?
A.Semi-conductors
B.Linear circuits
C.Electrolytes
D.Vacuum tubes
Correct Answer: Linear circuits
Explanation:Ohm's law is valid only for linear circuits where the resistance remains constant and does not change with voltage or current. It is not applicable to non-linear devices like semiconductors or vacuum tubes.
Incorrect! Try again.
3Kirchhoff's Current Law (KCL) is based on the principle of conservation of:
A.Energy
B.Charge
C.Momentum
D.Voltage
Correct Answer: Charge
Explanation:KCL states that the algebraic sum of currents entering a node is zero. This implies that charge cannot accumulate at a node, reflecting the law of conservation of charge.
Incorrect! Try again.
4According to Kirchhoff's Voltage Law (KVL), the algebraic sum of voltage drops and EMFs in a closed loop is:
A.One
B.Infinite
C.Zero
D.Equal to the current
Correct Answer: Zero
Explanation:KVL states that in any closed loop network, the total voltage around the loop is equal to the sum of all the voltage drops within the same loop, which equals zero ().
Incorrect! Try again.
5In a series circuit with two resistors and connected to a voltage source , what is the voltage across according to the Voltage Division Rule?
A.
B.
C.
D.
Correct Answer:
Explanation:The voltage division rule states that the voltage across a resistor in a series circuit is equal to the total voltage times the ratio of that resistance to the total resistance.
Incorrect! Try again.
6For two resistors and connected in parallel, if the total current is , the current through is given by:
A.
B.
C.
D.
Correct Answer:
Explanation:According to the Current Division Rule, the current through one of the parallel branches is equal to the total current multiplied by the resistance of the opposite branch divided by the total resistance.
Incorrect! Try again.
7What is the unit of electrical conductance?
A.Ohm ()
B.Volt ()
C.Siemens ()
D.Henry ()
Correct Answer: Siemens ()
Explanation:Conductance is the reciprocal of resistance (). The SI unit of conductance is Siemens (), formerly known as Mho.
Incorrect! Try again.
8Kirchhoff’s Voltage Law (KVL) deals with the conservation of:
A.Charge
B.Energy
C.Mass
D.Momentum
Correct Answer: Energy
Explanation:KVL implies that the work done in moving a unit charge around a closed loop is zero, which is a statement of the conservation of energy.
Incorrect! Try again.
9Three resistors of , , and are connected in series. If the total voltage is , what is the current in the circuit?
A.
B.
C.
D.
Correct Answer:
Explanation:Total resistance . According to Ohm's law, .
Incorrect! Try again.
10Which material is classified as a semiconductor?
A.Copper
B.Silicon
C.Glass
D.Aluminum
Correct Answer: Silicon
Explanation:Silicon (Si) and Germanium (Ge) are the most common semiconductor materials. Copper and Aluminum are conductors, while Glass is an insulator.
Incorrect! Try again.
11How many valence electrons does a pure Silicon atom have?
A.1
B.3
C.4
D.5
Correct Answer: 4
Explanation:Silicon belongs to Group 14 of the periodic table and is a tetravalent element, meaning it has 4 electrons in its outermost (valence) shell.
Incorrect! Try again.
12An intrinsic semiconductor is:
A.A semiconductor doped with pentavalent impurity
B.A semiconductor doped with trivalent impurity
C.A pure semiconductor without any impurity
D.A highly conductive metal
Correct Answer: A pure semiconductor without any impurity
Explanation:Intrinsic semiconductors are chemically pure forms of semiconductors (like pure Si or Ge) where conductivity is governed solely by thermally generated electron-hole pairs.
Incorrect! Try again.
13To obtain an N-type semiconductor, intrinsic silicon must be doped with:
A.Trivalent impurity
B.Pentavalent impurity
C.Tetravalent impurity
D.No impurity
Correct Answer: Pentavalent impurity
Explanation:N-type semiconductors are created by adding pentavalent impurities (Group 15 elements like Phosphorus, Arsenic, Antimony), which provide extra electrons.
Incorrect! Try again.
14Which of the following is a Trivalent impurity (Acceptor)?
A.Phosphorus
B.Arsenic
C.Boron
D.Antimony
Correct Answer: Boron
Explanation:Boron, Indium, and Gallium are trivalent elements (Group 13) used to create P-type semiconductors.
Incorrect! Try again.
15In a P-type semiconductor, the majority charge carriers are:
A.Electrons
B.Holes
C.Ions
D.Neutrons
Correct Answer: Holes
Explanation:In P-type materials, trivalent doping creates vacancies called holes. Thus, holes are the majority carriers and electrons are the minority carriers.
Incorrect! Try again.
16What happens to the resistance of a pure semiconductor as temperature increases?
A.It increases
B.It decreases
C.It remains constant
D.It fluctuates randomly
Correct Answer: It decreases
Explanation:Semiconductors have a Negative Temperature Coefficient (NTC) of resistance. As temperature rises, more covalent bonds break, generating more carriers, thus decreasing resistance.
Incorrect! Try again.
17The forbidden energy gap for Silicon at room temperature is approximately:
A.
B.
C.
D.
Correct Answer:
Explanation:The energy gap () separates the valence band and conduction band. For Silicon, it is approximately (specifically at 300K).
Incorrect! Try again.
18A PN junction diode allows current to flow easily in:
A.Reverse bias only
B.Both forward and reverse bias
C.Forward bias only
D.Neither bias
Correct Answer: Forward bias only
Explanation:A PN junction diode is a unidirectional device. It conducts significant current only when forward biased (Anode positive, Cathode negative).
Incorrect! Try again.
19The region near the PN junction which is free of mobile charge carriers is called:
A.Conductive region
B.Depletion region
C.Doped region
D.Neutral region
Correct Answer: Depletion region
Explanation:The depletion region acts as a barrier at the junction, formed by immobile ions after charge carriers diffuse and recombine. It is depleted of mobile charge carriers.
Incorrect! Try again.
20When a PN junction is forward biased, the width of the depletion layer:
A.Increases
B.Decreases
C.Remains the same
D.Becomes infinite
Correct Answer: Decreases
Explanation:In forward bias, the external electric field opposes the internal potential barrier, pushing majority carriers towards the junction and reducing the width of the depletion layer.
Incorrect! Try again.
21What is the typical knee voltage (cut-in voltage) for a Silicon diode?
A.
B.
C.
D.
Correct Answer:
Explanation:For a silicon PN junction diode to conduct significantly, the applied forward voltage must exceed the potential barrier, which is approximately .
Incorrect! Try again.
22The small current flowing through a diode during reverse bias is due to:
A.Majority carriers
B.Minority carriers
C.Immobile ions
D.Metal contacts
Correct Answer: Minority carriers
Explanation:Reverse saturation current (leakage current) is caused by thermally generated minority carriers (electrons in P-region, holes in N-region) drifting across the junction.
Incorrect! Try again.
23Which component is used to convert AC to DC?
A.Transformer
B.Rectifier
C.Inverter
D.Amplifier
Correct Answer: Rectifier
Explanation:A rectifier is a circuit utilizing diodes to convert Alternating Current (AC) into pulsating Direct Current (DC).
Incorrect! Try again.
24What is the maximum efficiency of a Half-Wave Rectifier?
A.
B.
C.
D.
Correct Answer:
Explanation:The theoretical maximum efficiency of a half-wave rectifier is .
Incorrect! Try again.
25How many diodes are required for a bridge full-wave rectifier?
A.1
B.2
C.4
D.8
Correct Answer: 4
Explanation:A bridge rectifier configuration typically requires 4 diodes arranged in a bridge topology to rectify both half-cycles of the AC input.
Incorrect! Try again.
26The Peak Inverse Voltage (PIV) rating for a diode in a Center-Tapped Full-Wave Rectifier is:
A.
B.
C.
D.
Correct Answer:
Explanation:In a center-tapped full-wave rectifier, when one diode is conducting, the other is reverse biased with the full voltage across the entire secondary winding, which is .
Incorrect! Try again.
27The ripple factor of a standard Full-Wave Rectifier is:
A.1.21
B.0.48
C.0.81
D.0.10
Correct Answer: 0.48
Explanation:The ripple factor measures the smoothness of the DC output. For a full-wave rectifier (Bridge or Center-tapped), the ripple factor is $0.482$.
Incorrect! Try again.
28Ideally, when a diode acts as a switch, in the ON state it acts as:
A.An open circuit ()
B.A short circuit ()
C.A voltage source
D.A capacitor
Correct Answer: A short circuit ()
Explanation:An ideal diode in the ON state (Forward Bias) has zero resistance and acts as a short circuit (closed switch).
Incorrect! Try again.
29BJT stands for:
A.Basic Junction Transfer
B.Bipolar Junction Transistor
C.Bi-directional Junction Transistor
D.Base Junction Terminal
Correct Answer: Bipolar Junction Transistor
Explanation:BJT stands for Bipolar Junction Transistor. It is 'Bipolar' because conduction involves both electrons and holes.
Incorrect! Try again.
30The three terminals of a BJT are:
A.Anode, Cathode, Gate
B.Drain, Source, Gate
C.Emitter, Base, Collector
D.Input, Output, Ground
Correct Answer: Emitter, Base, Collector
Explanation:The three terminals of a BJT are the Emitter (E), Base (B), and Collector (C).
Incorrect! Try again.
31In a BJT, which region is the most heavily doped?
A.Emitter
B.Base
C.Collector
D.All are equally doped
Correct Answer: Emitter
Explanation:The Emitter is the most heavily doped region because its primary function is to inject charge carriers into the Base.
Incorrect! Try again.
32Which BJT region is physically the widest (largest area)?
A.Emitter
B.Base
C.Collector
D.Depletion region
Correct Answer: Collector
Explanation:The Collector is physically the largest region to dissipate the heat generated during transistor operation.
Incorrect! Try again.
33In a BJT operating in the active region, the relationship between currents is:
A.
B.
C.
D.
Correct Answer:
Explanation:According to Kirchhoff's Current Law applied to the transistor as a whole, the Emitter current () is the sum of Collector current () and Base current ().
Incorrect! Try again.
34The symbol for current gain in the Common Emitter (CE) configuration is:
A. (Alpha)
B. (Beta)
C. (Gamma)
D. (Delta)
Correct Answer: (Beta)
Explanation: represents the DC current gain in Common Emitter configuration, defined as the ratio of Collector current to Base current ().
Incorrect! Try again.
35For a BJT to operate in the Active region (used for amplification):
Explanation:To operate as an amplifier (Active region), the input junction (Emitter-Base) must be forward biased and the output junction (Collector-Base) must be reverse biased.
Incorrect! Try again.
36If both junctions of a BJT are forward biased, the transistor is in:
A.Active region
B.Saturation region
C.Cut-off region
D.Breakdown region
Correct Answer: Saturation region
Explanation:In the Saturation region, both the Emitter-Base and Collector-Base junctions are forward biased, acting like a closed switch.
Incorrect! Try again.
37The relationship between and is given by:
A.
B.
C.
D.
Correct Answer:
Explanation:Since and , and knowing , the derivation leads to .
Incorrect! Try again.
38In Common Emitter (CE) configuration output characteristics, the curve is plotted between:
A. and
B. and
C. and
D. and
Correct Answer: and
Explanation:The output characteristics of a CE configuration show the relationship between the output current () and output voltage () for constant values of input current ().
Incorrect! Try again.
39The base region of a BJT is:
A.Thick and heavily doped
B.Thin and lightly doped
C.Thin and heavily doped
D.Thick and lightly doped
Correct Answer: Thin and lightly doped
Explanation:To allow charge carriers to pass from the Emitter to the Collector with minimal recombination, the Base must be very thin and lightly doped.
Incorrect! Try again.
40If a BJT is used as an open switch, it operates in the:
A.Active region
B.Saturation region
C.Cut-off region
D.Reverse active region
Correct Answer: Cut-off region
Explanation:In the Cut-off region, both junctions are reverse biased, and essentially zero current flows, mimicking an open switch.
Incorrect! Try again.
41What is the Peak Inverse Voltage (PIV) of a Bridge Rectifier?
A.
B.
C.
D.
Correct Answer:
Explanation:In a bridge rectifier, two diodes conduct at a time. The peak reverse voltage across the non-conducting diodes is equal to the peak supply voltage .
Incorrect! Try again.
42Which statement is true regarding Extrinsic semiconductors?
A.Number of electrons always equals number of holes
B.Conductivity is lower than intrinsic semiconductors
C.Doping increases the number of charge carriers
D.They are insulators at room temperature
Correct Answer: Doping increases the number of charge carriers
Explanation:Extrinsic semiconductors are doped with impurities specifically to increase the number of majority charge carriers (electrons or holes) and improve conductivity.
Incorrect! Try again.
43In a NPN transistor, the arrow on the emitter symbol points:
A.Inward
B.Outward
C.Upward
D.Downward
Correct Answer: Outward
Explanation:The arrow indicates the direction of conventional current flow. In an NPN transistor, current flows out of the emitter, so the arrow points outward.
Incorrect! Try again.
44Which law states ?
A.Ohm's Law
B.Kirchhoff's Voltage Law
C.Kirchhoff's Current Law
D.Faraday's Law
Correct Answer: Kirchhoff's Current Law
Explanation:KCL states that the sum of currents entering a node equals the sum of currents leaving the node.
Incorrect! Try again.
45The input characteristics of a CE transistor configuration resemble:
A.A forward biased diode
B.A reverse biased diode
C.A linear resistor
D.A capacitor
Correct Answer: A forward biased diode
Explanation:The input side of a CE transistor is the Base-Emitter junction. Since this is forward biased in active mode, the vs graph looks like a forward-biased diode characteristic.
Incorrect! Try again.
46What is the value of for a transistor having ?
A.0.9
B.0.99
C.1.01
D.100
Correct Answer: 0.99
Explanation:Using the formula , we get .
Incorrect! Try again.
47A silicon diode has a reverse saturation current of 10 nA. If the temperature increases, this current will:
A.Decrease
B.Increase
C.Remain zero
D.Change direction
Correct Answer: Increase
Explanation:Reverse saturation current is highly sensitive to temperature. It approximately doubles for every rise in temperature.
Incorrect! Try again.
48In a voltage divider circuit with and across a source, the voltage across is:
A.
B.
C.
D.
Correct Answer:
Explanation:.
Incorrect! Try again.
49Which type of charge carrier has higher mobility in Silicon?
A.Holes
B.Electrons
C.Both have equal mobility
D.Ions
Correct Answer: Electrons
Explanation:Electrons have higher mobility than holes because electrons travel through the conduction band (freer space), whereas holes travel through the valence band (hopping between atoms).
Incorrect! Try again.
50When applying KVL to a loop, if we move across a resistor in the direction of the current, the voltage change is:
A.Positive ()
B.Negative ()
C.Zero
D.Positive ()
Correct Answer: Negative ()
Explanation:Moving in the direction of current across a resistor implies moving from higher potential to lower potential, representing a voltage drop, hence conventional sign is negative ().
Incorrect! Try again.
Give Feedback
Help us improve by sharing your thoughts or reporting issues.