Unit 1 - Practice Quiz

ECE249

1 Which of the following correctly states Ohm's Law?

A.
B.
C.
D.

2 Ohm's law is applicable to which of the following?

A. Semi-conductors
B. Linear circuits
C. Electrolytes
D. Vacuum tubes

3 Kirchhoff's Current Law (KCL) is based on the principle of conservation of:

A. Energy
B. Charge
C. Momentum
D. Voltage

4 According to Kirchhoff's Voltage Law (KVL), the algebraic sum of voltage drops and EMFs in a closed loop is:

A. One
B. Infinite
C. Zero
D. Equal to the current

5 In a series circuit with two resistors and connected to a voltage source , what is the voltage across according to the Voltage Division Rule?

A.
B.
C.
D.

6 For two resistors and connected in parallel, if the total current is , the current through is given by:

A.
B.
C.
D.

7 What is the unit of electrical conductance?

A. Ohm ()
B. Volt ()
C. Siemens ()
D. Henry ()

8 Kirchhoff’s Voltage Law (KVL) deals with the conservation of:

A. Charge
B. Energy
C. Mass
D. Momentum

9 Three resistors of , , and are connected in series. If the total voltage is , what is the current in the circuit?

A.
B.
C.
D.

10 Which material is classified as a semiconductor?

A. Copper
B. Silicon
C. Glass
D. Aluminum

11 How many valence electrons does a pure Silicon atom have?

A. 1
B. 3
C. 4
D. 5

12 An intrinsic semiconductor is:

A. A semiconductor doped with pentavalent impurity
B. A semiconductor doped with trivalent impurity
C. A pure semiconductor without any impurity
D. A highly conductive metal

13 To obtain an N-type semiconductor, intrinsic silicon must be doped with:

A. Trivalent impurity
B. Pentavalent impurity
C. Tetravalent impurity
D. No impurity

14 Which of the following is a Trivalent impurity (Acceptor)?

A. Phosphorus
B. Arsenic
C. Boron
D. Antimony

15 In a P-type semiconductor, the majority charge carriers are:

A. Electrons
B. Holes
C. Ions
D. Neutrons

16 What happens to the resistance of a pure semiconductor as temperature increases?

A. It increases
B. It decreases
C. It remains constant
D. It fluctuates randomly

17 The forbidden energy gap for Silicon at room temperature is approximately:

A.
B.
C.
D.

18 A PN junction diode allows current to flow easily in:

A. Reverse bias only
B. Both forward and reverse bias
C. Forward bias only
D. Neither bias

19 The region near the PN junction which is free of mobile charge carriers is called:

A. Conductive region
B. Depletion region
C. Doped region
D. Neutral region

20 When a PN junction is forward biased, the width of the depletion layer:

A. Increases
B. Decreases
C. Remains the same
D. Becomes infinite

21 What is the typical knee voltage (cut-in voltage) for a Silicon diode?

A.
B.
C.
D.

22 The small current flowing through a diode during reverse bias is due to:

A. Majority carriers
B. Minority carriers
C. Immobile ions
D. Metal contacts

23 Which component is used to convert AC to DC?

A. Transformer
B. Rectifier
C. Inverter
D. Amplifier

24 What is the maximum efficiency of a Half-Wave Rectifier?

A.
B.
C.
D.

25 How many diodes are required for a bridge full-wave rectifier?

A. 1
B. 2
C. 4
D. 8

26 The Peak Inverse Voltage (PIV) rating for a diode in a Center-Tapped Full-Wave Rectifier is:

A.
B.
C.
D.

27 The ripple factor of a standard Full-Wave Rectifier is:

A. 1.21
B. 0.48
C. 0.81
D. 0.10

28 Ideally, when a diode acts as a switch, in the ON state it acts as:

A. An open circuit ()
B. A short circuit ()
C. A voltage source
D. A capacitor

29 BJT stands for:

A. Basic Junction Transfer
B. Bipolar Junction Transistor
C. Bi-directional Junction Transistor
D. Base Junction Terminal

30 The three terminals of a BJT are:

A. Anode, Cathode, Gate
B. Drain, Source, Gate
C. Emitter, Base, Collector
D. Input, Output, Ground

31 In a BJT, which region is the most heavily doped?

A. Emitter
B. Base
C. Collector
D. All are equally doped

32 Which BJT region is physically the widest (largest area)?

A. Emitter
B. Base
C. Collector
D. Depletion region

33 In a BJT operating in the active region, the relationship between currents is:

A.
B.
C.
D.

34 The symbol for current gain in the Common Emitter (CE) configuration is:

A. (Alpha)
B. (Beta)
C. (Gamma)
D. (Delta)

35 For a BJT to operate in the Active region (used for amplification):

A. Emitter-Base fwd biased, Collector-Base fwd biased
B. Emitter-Base rev biased, Collector-Base rev biased
C. Emitter-Base fwd biased, Collector-Base rev biased
D. Emitter-Base rev biased, Collector-Base fwd biased

36 If both junctions of a BJT are forward biased, the transistor is in:

A. Active region
B. Saturation region
C. Cut-off region
D. Breakdown region

37 The relationship between and is given by:

A.
B.
C.
D.

38 In Common Emitter (CE) configuration output characteristics, the curve is plotted between:

A. and
B. and
C. and
D. and

39 The base region of a BJT is:

A. Thick and heavily doped
B. Thin and lightly doped
C. Thin and heavily doped
D. Thick and lightly doped

40 If a BJT is used as an open switch, it operates in the:

A. Active region
B. Saturation region
C. Cut-off region
D. Reverse active region

41 What is the Peak Inverse Voltage (PIV) of a Bridge Rectifier?

A.
B.
C.
D.

42 Which statement is true regarding Extrinsic semiconductors?

A. Number of electrons always equals number of holes
B. Conductivity is lower than intrinsic semiconductors
C. Doping increases the number of charge carriers
D. They are insulators at room temperature

43 In a NPN transistor, the arrow on the emitter symbol points:

A. Inward
B. Outward
C. Upward
D. Downward

44 Which law states ?

A. Ohm's Law
B. Kirchhoff's Voltage Law
C. Kirchhoff's Current Law
D. Faraday's Law

45 The input characteristics of a CE transistor configuration resemble:

A. A forward biased diode
B. A reverse biased diode
C. A linear resistor
D. A capacitor

46 What is the value of for a transistor having ?

A. 0.9
B. 0.99
C. 1.01
D. 100

47 A silicon diode has a reverse saturation current of 10 nA. If the temperature increases, this current will:

A. Decrease
B. Increase
C. Remain zero
D. Change direction

48 In a voltage divider circuit with and across a source, the voltage across is:

A.
B.
C.
D.

49 Which type of charge carrier has higher mobility in Silicon?

A. Holes
B. Electrons
C. Both have equal mobility
D. Ions

50 When applying KVL to a loop, if we move across a resistor in the direction of the current, the voltage change is:

A. Positive ()
B. Negative ()
C. Zero
D. Positive ()